magnetoresistiverandomaccessmemory

Magnetoresistiverandom-accessmemory(MRAM)isatypeofnon-volatilerandom-accessmemorywhichstoresdatainmagneticdomains.,由JDaughton著作·2004·被引用3次—Magnetoresistiverandomaccessmemory(MRAM)ispotentiallyan'ideal'memorybecauseithasthepropertiesofnonvolatility,highspeed,unlimitedwrite ...,由DApalkov著作·2016·被引用547次—Magnetoresistiverandomaccessmemory(MRAM)isaclassofsolid-statestoragecircuitsthat...

參考資訊如下
Magnetoresistive RAM

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains.

Magnetoresistive random access memories

由 J Daughton 著作 · 2004 · 被引用 3 次 — Magnetoresistive random access memory (MRAM) is potentially an 'ideal' memory because it has the properties of nonvolatility, high speed, unlimited write ...

Magnetoresistive Random Access Memory

由 D Apalkov 著作 · 2016 · 被引用 547 次 — Magnetoresistive random access memory (MRAM) is a class of solid-state storage circuits that store data as.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance.

Magnetoresistive Random Access Memory

由 S Ikegawa 著作 · 2020 · 被引用 139 次 — Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent memory technology because of its long data retention and ...

What is MRAM (Magnetoresistive random access memory)?

Magnetoresistive random access memory, MRAM, is a type of non-volatile memory that uses magnetic states instead of the electrical charges to store bits.

What is MRAM?

MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to ...

磁阻式隨機存取記憶體

磁阻式隨機存取記憶體（Magnetoresistive Random Access Memory，縮寫為MRAM），是一種非易失性記憶體技術，從1990年代開始發展。這個技術的擁護者認為，這個技術速度 ...